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Volume 26 - ICOP & ICPET 2020
ICOP & ICPET _ INPC _ ICOFS 2020, 26 - ICOP & ICPET 2020: 585-588 |
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Barghamadi L, Norouzian Alam S, Sedighy S H, Ghafary B. Effect of 60Co γ-irradiation at very low dose rate on n-GaN UV photodetector for space applications. ICOP & ICPET _ INPC _ ICOFS 2020; 26 :585-588
URL: http://opsi.ir/article-1-2125-en.html
URL: http://opsi.ir/article-1-2125-en.html
1- Iran University of Science and Technology, Tehran, Iran
Abstract: (1367 Views)
GaN MSM UV photodetector were fabricated on n-GaN epitaxial layer. The effect of room temperature 60Co γ-radiation at very low dose rate (0.0001 rad(Si)/s) on the electric current of photodetector was studied. In contrast to earlier observations, by increasing the gamma dose, an initial increasing of the dark current followed by the gradual decrease has been observed. The abnormal behavior of the voltage-current characteristic of the photodetector can be explained by considering the carriers transfer mechanism in localized states, which is very common in III-Nitride semiconductors. The results presented here are found to be important in understanding the mechanism of interaction of 60Co γ-irradiation with n-GaN epilayer.
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