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Darvishpour A, Ghahremani A. The influence of nitrogen content on the physical properties Cu3N thin films Produced by DC Magnetron Sputtering. ICOP & ICPET _ INPC _ ICOFS 2014; 20 :413-416
URL: http://opsi.ir/article-1-200-en.html
URL: http://opsi.ir/article-1-200-en.html
1- Sahand University of Technology
Abstract: (5705 Views)
In this experiment, the semiconducting Cu3N films were deposited on glass substrates by reactive Direct Current Magnetron Sputtering in a mixture gas of Nitrogen and Argon. The influence of nitrogen content in a fixed total sputtering gaz flow on the preferential crystalline orientation, the morphology, the conductivity properties of the copper nitride films were investigated by X-Ray Diffraction (X-RD) , Atomic Force microscopy (AFM) and Four-point probe techniques respectively.
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