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Torkaman P, Darbari S, Mohammad Zamani M J. Simulation and design of a photoconductive self-bias antenna based on GaN with dis-similar schottky contacts. ICOP & ICPET _ INPC _ ICOFS 2018; 24 :145-148
URL: http://opsi.ir/article-1-1626-en.html
URL: http://opsi.ir/article-1-1626-en.html
1- Tarbiat modares university,Tehran
Abstract: (2084 Views)
in this paper we introduce a photoconductive terahertz antenna. This emitter consists of asymmetric Schottky contacts on GaN layer, inducing an internal electric field. By radiating a short pulse with the wavelength of 350 nm, carriers are generated in the photoconductive active region. Rapid transition in the incident laser pulse, results in generation of high frequency components in the generated electric current. The resulted time varying current generates the THz radiation toward the bottom of the device.
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