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Pourali E, Daraie M, Asadi R. A Proposal for Design, Simulation and formation of a 0.45 μm thick Oxide on a Silicon Wafer. ICOP & ICPET _ INPC _ ICOFS 2014; 20 :1649-1652
URL: http://opsi.ir/article-1-100-en.html
URL: http://opsi.ir/article-1-100-en.html
1- Tarbiat Modares University
2- Pyame-Noor University
3- Azad University of Damavand
2- Pyame-Noor University
3- Azad University of Damavand
Abstract: (3694 Views)
In this paper we propose a method for formation of a 0.45 μm thick oxide on a 4 inch silicon wafer. We show that the simulation results are in very good agreement with practical process. We have used Athena TCAD package, Centrotherm oxidation tubes and optical microscope and α-step thickness measuring devices to simulate, fabricate and testing of the oxide.
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