fa High Efficiency Slotted Microring Si-Photodetector Based on Internal Photoemission Effect تخصصی Special پژوهشي Research Abstract- In this paper we propose an ultracompact integrated slotted-microring-internal photoemission effect photodetector (S-MR-IPE-PD) at the telecommunication wavelength of 1550 nm. The S-MR-IPE-PD is comprised of a nanometer-wide air slot over a Schottky barrier on CMOS-compatible microring resonator (MRR). The photon absorption is due to the IPE over a Schottky barrier at the metal/silicide -Si interface. Including the essential features of slot-waveguides and MR-based PDs, we can achieve excellent high-optical intensity, high speed and high quantum efficiency characteristics simultaneously. Photoresponse characteristics of S-MR-IPE-PDs which depend on device parameters and coupling conditions are investigated. The important features of the device, such as optical mode enhancement, efficiency enhancement and wavelength selectivity are discussed. Our numerical results prove that by using this PD, the low quantum efficiency, characterizing the devices based on the IPE can be enhanced efficiently. Additionally we show that by use of such a structure the optical field can be confined in a 30-nm wide air slot with enhanced optical mode. Abstract- In this paper we propose an ultracompact integrated slotted-microring-internal photoemission effect photodetector (S-MR-IPE-PD) at the telecommunication wavelength of 1550 nm. The S-MR-IPE-PD is comprised of a nanometer-wide air slot over a Schottky barrier on CMOS-compatible microring resonator (MRR). The photon absorption is due to the IPE over a Schottky barrier at the metal/silicide -Si interface. Including the essential features of slot-waveguides and MR-based PDs, we can achieve excellent high-optical intensity, high speed and high quantum efficiency characteristics simultaneously. Photoresponse characteristics of S-MR-IPE-PDs which depend on device parameters and coupling conditions are investigated. The important features of the device, such as optical mode enhancement, efficiency enhancement and wavelength selectivity are discussed. Our numerical results prove that by using this PD, the low quantum efficiency, characterizing the devices based on the IPE can be enhanced efficiently. Additionally we show that by use of such a structure the optical field can be confined in a 30-nm wide air slot with enhanced optical mode. Microring resonator, internal photoemission effect, slot, nanoscale, quantum efficiency Microring resonator, internal photoemission effect, slot, nanoscale, quantum efficiency 1583 1586 http://opsi.ir/browse.php?a_code=A-10-1-793&slc_lang=fa&sid=1 Mitra Hosseinifar Mitra Hosseinifar m.hosseinifar@srbiau.ac.ir 10031947532846003779 10031947532846003779 Yes Vahid Ahmadi Vahid Ahmadi v_ahmadi@modares.ac.ir 10031947532846003780 10031947532846003780 No Majid Ebnali-Heidari Majid Ebnali-Heidari ebnali-m@eng.sku.ac.ir 10031947532846003781 10031947532846003781 No