RT - Journal Article T1 - A Proposal for Design, Simulation and formation of a 0.45 μm thick Oxide on a Silicon Wafer JF - opsi YR - 2014 JO - opsi VO - 20 IS - 0 UR - http://opsi.ir/article-1-100-en.html SP - 1649 EP - 1652 K1 - Oxidation K1 - silicon AB - In this paper we propose a method for formation of a 0.45 μm thick oxide on a 4 inch silicon wafer. We show that the simulation results are in very good agreement with practical process. We have used Athena TCAD package, Centrotherm oxidation tubes and optical microscope and α-step thickness measuring devices to simulate, fabricate and testing of the oxide. LA eng UL http://opsi.ir/article-1-100-en.html M3 ER -