RT - Journal Article T1 - Modeling the Carrier-Carrier and Auger Scattering on the Performance of Quantum Dot Lasers JF - opsi YR - 2015 JO - opsi VO - 21 IS - 0 UR - http://opsi.ir/article-1-733-en.html SP - 1469 EP - 1472 K1 - Laser diode K1 - Modulation Response K1 - Quantum Dot K1 - scattering AB - In this paper, the effect of Auger scattering on the performance of semiconductor Quantum Dot Laser (QDL) is modeled. Variety of input and output scattering processes of carriers on the QDL performance is studied. The effect of varying the electrical current density on the Auger scattered carriers is investigated. Also, the scattering effect on the transient response and modulation response of quantum dot laser is analyzed. Results show that Auger relaxation is directly proportional to the electrical current density and also, the modulation bandwidth is destroyed by increasing Auger scattering. Results are in agreement with the experiment. LA eng UL http://opsi.ir/article-1-733-en.html M3 ER -