RT - Journal Article T1 - The Effects of Structural Parameters of GaN Based Asymmetric Doubled Quantum Wells on Optical Gain in Laser Diodes JF - opsi YR - 2015 JO - opsi VO - 21 IS - 0 UR - http://opsi.ir/article-1-708-en.html SP - 29 EP - 32 K1 - Optical gain K1 - Diode laser K1 - Double quantum well K1 - Quantum barrier K1 - Nitride material K1 - Asymmetric AB - In this paper, the optical gain of GaN doubled asymmetric quantum well based laser diode has been investigated. The rate of optical gain in the structure of doubled quantum wells with different structural parameters is considered. The optical gain is obtained for different values of aluminum mole fraction, variations of quantum well thickness and central quantum barrier width from 1 nm to 5 nm. The results of our calculations show that increasing the width of the central barrier and the doubled quantum well will decrease the optical gain. LA eng UL http://opsi.ir/article-1-708-en.html M3 ER -