TY - JOUR T1 - Theoretical study of the electrical properties of Au/n-GaN Schottky diode TT - مطالعه نظری خواص الکتریکی دیود شاتکی Au/n-GaN JF - opsi JO - opsi VL - 20 IS - 0 UR - http://opsi.ir/article-1-408-en.html Y1 - 2014 SP - 1177 EP - 1180 KW - Shottky diode KW - n-GaN KW - Thermionic emission KW - Electrical characteristics KW - Inhomogeneous barrier theory N2 - Abstract- In this research, we have studied the temperature dependence (100-350 K) of I-V characteristics in Au/n-GaN Schottky diode. Various quantities such as: barrier height (φb0), ideality factor (n) and series resistance (Rs) of the device are determined on the basis of a constant barrier height using thermionic emission theory (TE) by Chang's method. We found the extended thermionic emission theory considering an inhomogeneous (Gaussian distribution) barriers not only provide the preliminary theory results, but also lead to the correct value for the effective Richardsoncoefficient M3 ER -