RT - Journal Article T1 - Theoretical study of the electrical properties of Au/n-GaN Schottky diode JF - opsi YR - 2014 JO - opsi VO - 20 IS - 0 UR - http://opsi.ir/article-1-408-en.html SP - 1177 EP - 1180 K1 - Shottky diode K1 - n-GaN K1 - Thermionic emission K1 - Electrical characteristics K1 - Inhomogeneous barrier theory AB - Abstract- In this research, we have studied the temperature dependence (100-350 K) of I-V characteristics in Au/n-GaN Schottky diode. Various quantities such as: barrier height (φb0), ideality factor (n) and series resistance (Rs) of the device are determined on the basis of a constant barrier height using thermionic emission theory (TE) by Chang's method. We found the extended thermionic emission theory considering an inhomogeneous (Gaussian distribution) barriers not only provide the preliminary theory results, but also lead to the correct value for the effective Richardsoncoefficient LA eng UL http://opsi.ir/article-1-408-en.html M3 ER -