TY - JOUR JF - opsi JO - ICOP & ICPET _ INPC _ ICOFS VL - 20 IS - 0 PY - 2014 Y1 - 2014/1/01 TI - Analysis of the Optical Properties of Self-Assembled Pyramidal InAs/GaAs Quantum Dot Using the Extended Hückel Tight-Binding Method TT - تحلیل خواص نوری نقطه کوانتومی هرمی شکل InAs/GaAs به روش تنگ بست تعمیم داده شده Hückel N2 - Quantum-dot (QD) structures have the capability of the infrared intraband transitions because of their 3-dimensional confinement. In this paper, a self-assembled pyramidal InAs/GaAs QD is considered and the effects of the quantum dot geometry, such as the dot height and aspect ratio on the intraband transitions are theoretically studied by EHT formalism. The results show that QD size increase leads to considerable reduction of the beam absorption. SP - 37 EP - 40 AU - Sedaghat, Setareh AU - Berahman, Masood AU - Sheikhi, Mohammad Hossein AU - Zarifkar, Abbas AD - Shiraz University KW - Extended Hückel Tight-Binding KW - InAs/GaAs Quantum-Dot KW - Optical absorption coefficient. UR - http://opsi.ir/article-1-50-en.html ER -