TY - JOUR JF - opsi JO - ICOP & ICPET _ INPC _ ICOFS VL - 20 IS - 0 PY - 2014 Y1 - 2014/1/01 TI - A study on electrical and photo-conductance properties of n-ZnO/p-CuO heterojunction TT - مطالعه خواص الکتریکی و فوتو رسانایی در پیوندگاه ناهمگون n-ZnO/p-CuO N2 - Abstract- CuO/ZnO:Al hetero-junction were fabricated on FTO substrate by spray pyrolysis method. The prepared sample was characterized by XRD and UV-Vis. spectra, also I-V characterization in dark and under standard illumination. We found the investigated layers have a polycrystalline structure with an optical band gap of 3.25 eV for ZnO layer and 1.63 eV for CuO layer. Electrical characterization of the sample showed a rectifying behavior. The device reaction to the illumination showed that it has a higher sensitivity in reverse bias condition compared with that in forward bias. SP - 625 EP - 628 AU - Torabi Goodarzi, Mehdi AU - Eshghi, Hosein AD - Shahrood University of Technology KW - CuO/ZnO:Al hetero-junction KW - Spray pyrolysis KW - Rectification KW - Photo-current UR - http://opsi.ir/article-1-280-en.html ER -