TY - JOUR T1 - Investigation of the Impact Ionization Effect In Graphene Nanoribbon-based Phototransistor TT - بررسی تاثیر برخورد یونیزه کننده در ترانزیستور نوری مبتنی بر نانو روبان گرافن JF - opsi JO - opsi VL - 20 IS - 0 UR - http://opsi.ir/article-1-41-en.html Y1 - 2014 SP - 25 EP - 28 KW - Carrier Multiplication KW - Graphene Nanoribbon KW - Impact Ionization KW - Phototransistor N2 - In this paper we investigate the effect of impact ionization in graphene nanoribbon-based phototransitor for the first time.We consider a phototransistor based on an array of graphene nanoribbons in which the top gate and the back gate control the carrier multiplication and optical gain. Impact ionization and carrier multiplication occur in moderate drain voltages. So, elimination of the impact ionization in photocurrent calculation causes a big error. M3 ER -