%0 Journal Article %A Darvishpour, Abdolrahman %A Ghahremani, Ali %T The influence of nitrogen content on the physical properties Cu3N thin films Produced by DC Magnetron Sputtering %J Accepted and Presented Articles of OPSI Conferences %V 20 %N 0 %U http://opsi.ir/article-1-200-en.html %R %D 2014 %K Thin film, Cu3N, DC magnetron sputtering, Four-point probe, Atomic Force Microscopy, %X In this experiment, the semiconducting Cu3N films were deposited on glass substrates by reactive Direct Current Magnetron Sputtering in a mixture gas of Nitrogen and Argon. The influence of nitrogen content in a fixed total sputtering gaz flow on the preferential crystalline orientation, the morphology, the conductivity properties of the copper nitride films were investigated by X-Ray Diffraction (X-RD) , Atomic Force microscopy (AFM) and Four-point probe techniques respectively. %> http://opsi.ir/article-1-200-en.pdf %P 413-416 %& 413 %! %9 Research %L A-10-1-180 %+ Sahand University of Technology %G eng %@ 1126-3278 %[ 2014