TY - JOUR T1 - The Effect of Doping Concentration on the Output Optical Power of InGaN/GaN- Based Single Quantum-Well Light Emitting Diode TT - تاثیر چگالی آلایش بر توان نور خروجی از دیود نورگسیل تک چاه کوانتومی بر پایه InGaN/GaN JF - opsi JO - opsi VL - 24 IS - 0 UR - http://opsi.ir/article-1-1622-en.html Y1 - 2018 SP - 201 EP - 204 KW - recombination KW - output optical power KW - light-emitting diode(LED) KW - quantum-well structures KW - doping concentration. N2 - The main advantage of using of quantum-wells structure in light-emitting diodes (LEDs) is that these structures boost the surface recombination of electrical charge carriers and then, increases their output optical power. Doping concentration is one of the most effective factors for the magnitude of the output optical power in these LEDs. In this study, a single quantum-well LED based on InGaN/GaN was simulated and the effect of doping concentration on its performance was investigated at fixed anode voltage by using Silvaco (ATLAS) software. Characteristics of LED have been achieved for different values of dopant content. The output optical power of the LED would begin to raise to an optimum point as a result of increase in doping concentration. M3 ER -