TY - JOUR T1 - Simulation Based Optimization of Optical Output for Perovskite Light Emitting Diode TT - ‌ بهبود خروجی دیودنورگسیل پروسکایتی بر پایه شبیه سازی JF - opsi JO - opsi VL - 24 IS - 0 UR - http://opsi.ir/article-1-1566-en.html Y1 - 2018 SP - 805 EP - 808 KW - Perovskite light emitting diodes KW - two-dimensional simulation KW - Trap density of state KW - SRH recombination N2 - In this work, perovskite light emitting diode (PeLED) has been analyzed using two-dimensional simulation and its optical output is optimized. The device performance is investigated as a function of the perovskite thickness, as the active layer. The result reveals that the highest luminescence can be achieved by a perovskite layer with a thickness in the range of 5-20 nm. Furthermore, the density of trap states which indicates the quality of the active layer, is considered as one of the most substantial parameters to improve the efficiency of PeLEDs. It is shown that by increasing the lifetime of the carriers from 5 ns to 500 ns as a result of density of trap states reduction from 10-12 cm-3 for polycrystalline to 10-16 cm-3 for single crystal perovskite, the maximum luminous power enhances from 2.75 W/m2 to 3.26 W/m2 i.e. 18.5% increment in luminous power. M3 ER -