TY - JOUR T1 - Enhanced Open-circuit Voltage Using Al2O3 Inert Layer in Perovskite Solar Cells TT - بهبود ولتاژ مدارباز در سلول‌های خورشیدی پروسکایتی با استفاده از لایه‌ی دی اکسید آلومینیوم به عنوان لایه‌ خنثی الکتریکی JF - opsi JO - opsi VL - 24 IS - 0 UR - http://opsi.ir/article-1-1565-en.html Y1 - 2018 SP - 785 EP - 788 KW - reactive magnetron sputtering KW - passivation KW - Al2O3 KW - recombination KW - perovskite solar cell N2 - We investigate the effect of Al2O3 thin film deposited on an electron transfer layer (ETL: mp-TiO2 ) in the perovskite solar cells with the conventional structure of FTO/c-TiO2/mp-TiO2/CH3NH3PbI3/spiro-OMeTAD/Au. Using the rotational angular deposition method to deposit a nanolayer of insulating Al2O3 by the reactive magnetron sputtering (RMS), as a passivating layer, we compare the open-circuit voltage (VOC) of the perovskite solar cells with and without Al2O3. The comparison shows the passivated cells has a higher VOC. We observe the same effect for solar cells with and without the hole transfer layer (HTL: spiro-OMeTAD). The Al2O3 nanolayer decreases the recombination centers, leading to higher VOC and cell efficiency. M3 ER -