RT - Journal Article T1 - Persistent Photoconductivity Effect in p-Si/SiGe/Si Inverted Remote Modulation Structure JF - opsi YR - 2017 JO - opsi VO - 23 IS - 0 UR - http://opsi.ir/article-1-1246-en.html SP - 861 EP - 864 K1 - Inverted remote modulation structure K1 - Photoconductivity K1 - Two dimensional hole gas. AB - In this paper, the persistent photoconductivity effect of p-Si/SiGe/Si inverted modulation doped structure grown with molecular beam epitaxy method was investigated. A two dimensional hole gas with areal density nh was observed in the alloy layer off these structures which its density can be changed by illumination with LED. The experimental results of Hall effect measurement experiment indicated that illumination of the sample by red light in temperature, leads to enhancing the two dimensional hole gas density and its electrical conductivity. This effect is a consequence of neutralizing the Si surface charges due to photo absorption in the Si cap and electron-hole pairs generation. LA eng UL http://opsi.ir/article-1-1246-en.html M3 ER -