AU - Abdolhosseini, Saeed AU - Kaatuzian, Hassan AU - Choupanzadeh, Bahram AU - Kohandani, Reza TI - Technical Characteristics Improvement of Multiple Quantum Well Semiconductor Slow Light Devices Based on Excitonic Population Oscillations PT - JOURNAL ARTICLE TA - opsi JN - opsi VO - 23 VI - 0 IP - 0 4099 - http://opsi.ir/article-1-1214-en.html 4100 - http://opsi.ir/article-1-1214-en.pdf SO - opsi 0 ABĀ  - This article indicates the effects of physical dimensions variations on optical properties of GaAs/AlGaAs multiple quantum well (MQW) slow light devices based on coherent population oscillations (CPO) method. These physical parameters include, quantum well size and number. Bloch equations have been used to analyze and simulate the device with different parameters. This paper offers several methods for tuning the central frequency and slow down factor (SDF) of the slow light device. Based on these proposed approaches, we could improve optical properties of MQW slow light devices. According to simulation results, the maximum value of SDF can be achieved in a range of 3×105 with variations of physical parameters. CP - IRAN IN - LG - eng PB - opsi PG - 1113 PT - Research YR - 2017