Association Mission

The mission of the association is to advance the creation, communication and application of knowledge to benefit society and improve people's lives.  

Legal Members

 

Membership

XML Persian Abstract Print


Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

Ghezelayagh M, sabet Dariani R. Fabrication of porous silicon at different porosities for optical conductive applications. ICOP & ICPET _ INPC _ ICOFS 2016; 22 :640-643
URL: http://opsi.ir/article-1-988-en.html
1- Alzahra University
Abstract:   (2669 Views)

Porous silicon has many applications in optoelectronics industry especially in light emitting diodes and solar cells. In this paper, porous silicon was made from p-type silicon under current densities of 20, 25, 30, and 35 mA/cm2 with constant etching time and electrolyte concentration at anodizing process. Porosity and thickness of layers were measured by SEM images and Digimizer software. According to our results, porosity and thickness of layers increase with increasing etching current density.

Full-Text [PDF 362 kb]   (732 Downloads)    
Type of Study: Research | Subject: Special

Send email to the article author


Rights and permissions
Creative Commons License This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

© 2024 All Rights Reserved | Optics and Photonics Society of Iran

Designed & Developed by : Yektaweb