In this paper the behavior of InAs/InP quantum dot semiconductor lasers in 1.55µm by considering excited and ground state and effects gain homogeneous broadening and inhomogeneous broadening will be simulate by implementing rate equations. The simulation results indicates increasing in injected current when direct relaxation channel between wetting state and ground state is considered, there is no effect of ground state saturation. In addition, the excited state lasing will appear in 1.42µm. in the following, by examining the number of quantum dot layers, the quantum efficiency will enhance by increase in quantum dot layers but the threshold current will increase too.

Keywords: Gain optical, Inhomogeneous broadening, Quantum dot laser, Rate equations

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