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ICOP & ICPET 2015, 21 - : 29-32 Back to browse issues page
The Effects of Structural Parameters of GaN Based Asymmetric Doubled Quantum Wells on Optical Gain in Laser Diodes
Elmira Annabi milani * 1, Asghar Asgari 1
1- tabriz university
Abstract:   (2524 Views)
In this paper, the optical gain of GaN doubled asymmetric quantum well based laser diode has been investigated. The rate of optical gain in the structure of doubled quantum wells with different structural parameters is considered. The optical gain is obtained for different values of aluminum mole fraction, variations of quantum well thickness and central quantum barrier width from 1 nm to 5 nm. The results of our calculations show that increasing the width of the central barrier and the doubled quantum well will decrease the optical gain.
Keywords: Optical gain, Diode laser, Double quantum well, Quantum barrier, Nitride material, Asymmetric
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Type of Study: Research | Subject: Special
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annabi milani E, asgari A. The Effects of Structural Parameters of GaN Based Asymmetric Doubled Quantum Wells on Optical Gain in Laser Diodes. ICOP & ICPET. 2015; 21 :29-32
URL: http://opsi.ir/article-1-708-en.html


Volume 21 - Back to browse issues page
انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
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