In this paper we investigate theoretically the effect of p-doping on the relative intensity noise characteristics of 1.3µm InAs/GaAs quantum dot lasers. The rate equations for electrons and holes in three QDs' discrete levels, wetting and barrier states besides the rate of photons have been linearized in small signal regime around the operating point. Calculations demonstrate that p-doping would decrease the relative intensity noise of the quantum dot lasers. By increasing the injection current, the output power rises and the noise intensity reduces in p-doped QD laser which is in agreement with reported experimental results.

واژه‌های کلیدی: Quantum dot lasers، P-doping، Nonlinear gain، Langevin sources، Relative intensity noise.

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