In this research work, Si-O and C-O bonds are formed on the surface of the 50 nm sized silicon carbide (SiC) nanostructures using thermal annealing and chemical etching . Fourier transform infrared spectroscopy (FTIR) confirmed the surface bond formations on the SiC nanostructures. UV-visible absorption spectroscopy shows an increase in the optical band gap of the nanostructures about 0.58 eV due to C-O bond . The increase in the optical band gap about 0.87 eV is achieved when the nanostructures surface is modified by the both Si-O and C-O bonds. The observed optical properties corroborate the potential of the silicon carbide nanostructures in UV light emitting diodes and lasers.

Keywords: silicon carbide nanostructures, surface modification, C-O bond, Si-O bond, band gap enhancement

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