In this paper the dark saturation current of p-n junction GaN solar cells with assuming two important types of recombination including Shockley-Read- Hall and Auger recombinations has been investigated. For this aim, with calculating the rate of net recombination of a p-n junction GaN solar cell under illumination and using of it in the minority carriers and continuity equations, an expression for the minority carrier's concentration in the base region has been obtained. Also the dependence of the dark saturation current density on different parameters such as dopancee of the base, the width of the base and etc. has been investigated.

Keywords: solar cell, dark saturation current, minority carriers.

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