Volume 20 -                   ICOP & ICPET _ INPC _ ICOFS 2014, 20 - : 37-40 | Back to browse issues page

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Analysis of the Optical Properties of Self-Assembled Pyramidal InAs/GaAs Quantum Dot Using the Extended Hückel Tight-Binding Method
Setareh Sedaghat1 , Masood Berahman1 , Mohammad Hossein Sheikhi1 , Abbas Zarifkar * 1
1- Shiraz University
Abstract:   (7703 Views)
Quantum-dot (QD) structures have the capability of the infrared intraband transitions because of their 3-dimensional confinement. In this paper, a self-assembled pyramidal InAs/GaAs QD is considered and the effects of the quantum dot geometry, such as the dot height and aspect ratio on the intraband transitions are theoretically studied by EHT formalism. The results show that QD size increase leads to considerable reduction of the beam absorption.
Keywords: Extended Hückel Tight-Binding, InAs/GaAs Quantum-Dot, Optical absorption coefficient.
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Type of Study: Research | Subject: Special
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