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ICOP & ICPET 2015, 21 - : 53-56 Back to browse issues page
Analysis of Optoelectronic Characteristics of Short Wavelength Transistor Laser
Abstract:   (2222 Views)
This paper deals with analysis and simulation of optoelectronic characteristics of transistor laser, which is capable of operating at short wavelengths. A charge control model based-on rate equations is utilized. Simulations show that the device has 12.3 kA/cm2 threshold current density and 10.6 current gain. Also 30 GHz optical bandwidth, a resonance peak below 5 dB and 53.4 GHz maximum frequency in the case of 15 nm quantum-well width and a cavity length of 500 µm is yield.
Keywords: Optoelectronic, Optical Bandwidth, Threshold Current, Quantum Well, Transistor Laser
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Type of Study: Research | Subject: Special
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Analysis of Optoelectronic Characteristics of Short Wavelength Transistor Laser . ICOP & ICPET. 2015; 21 :53-56
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Volume 21 - Back to browse issues page
انجمن اپتیک و فوتونیک ایران Optics and Photonics Society of Iran
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