Abstract- In this paper, we have studied the bandedge and energy levels of pyramidal InGaAs based quantum dots (QDs) surrounded by GaAs. We show that by changing the In ratio rather than Ga in the QD, not only the allowed energy states increase, but also the conduction and valence bandedges get closer to each other. We even show that the radiation wavelength get longer. Our results appear to coincide with former researches.

Keywords: Strain, bandedge, nano-electronics, quantum dots

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