Volume 26 - ICOP & ICPET 2020                   ICOP & ICPET _ INPC _ ICOFS 2020, 26 - ICOP & ICPET 2020: 449-452 | Back to browse issues page

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Study of the effect of AlGaN electron blocking layer on the characteristics of InGaN/GaN MQW solar cells
Ali Nasiri *1 , Azita Zandi Goharrizi1 , Hassan Safari1 , Ghasem Alahyarizadeh2
1- Graduate University of Advanced Technology, Kerman
2- Engineering Department, Shahid Beheshti University, Tehran
Abstract:   (2872 Views)
In this paper, to investigate the effect of AlGaN electron blocking layer (EBL) on the characteristics of InGaN/GaN multi-quantum-well solar cells, at first this structure without EBL layer was simulated using Silvaco-atlas software and efficiency of 27.80% was achieved. Then by inserting a 20nm p-Al0.1Ga0.9N electron blocking layer the cell characteristics was evaluated for different doping values, and the optimal efficiency for 2×1019 cm-3 doping concentration was obtained 40.05%. Simulation results show that inserting the p-AlGaN EBL layer to the cell structure increased the conduction band offset. This will block the flow of electrons to the p-region, consequently the solar cell efficiency will be increased due to the reducing of recombination and improving the hole collection.
Keywords: Efficiency, Multi-quantum-well, Solar cell, Simulation, Electron blocking layer
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Type of Study: Research | Subject: Special
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