Association Mission

The mission of the association is to advance the creation, communication and application of knowledge to benefit society and improve people's lives.  

Legal Members

 

Membership

Volume 26 - ICOP & ICPET 2020                   ICOP & ICPET _ INPC _ ICOFS 2020, 26 - ICOP & ICPET 2020: 449-452 | Back to browse issues page

XML Persian Abstract Print


Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

Nasiri A, Zandi Goharrizi A, Safari H, Alahyarizadeh G. Study of the effect of AlGaN electron blocking layer on the characteristics of InGaN/GaN MQW solar cells. ICOP & ICPET _ INPC _ ICOFS 2020; 26 :449-452
URL: http://opsi.ir/article-1-2085-en.html
1- Graduate University of Advanced Technology, Kerman
2- Engineering Department, Shahid Beheshti University, Tehran
Abstract:   (1337 Views)
In this paper, to investigate the effect of AlGaN electron blocking layer (EBL) on the characteristics of InGaN/GaN multi-quantum-well solar cells, at first this structure without EBL layer was simulated using Silvaco-atlas software and efficiency of 27.80% was achieved. Then by inserting a 20nm p-Al0.1Ga0.9N electron blocking layer the cell characteristics was evaluated for different doping values, and the optimal efficiency for 2×1019 cm-3 doping concentration was obtained 40.05%. Simulation results show that inserting the p-AlGaN EBL layer to the cell structure increased the conduction band offset. This will block the flow of electrons to the p-region, consequently the solar cell efficiency will be increased due to the reducing of recombination and improving the hole collection.
Full-Text [PDF 528 kb]   (297 Downloads)    
Type of Study: Research | Subject: Special

Rights and permissions
Creative Commons License This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

© 2024 All Rights Reserved | Optics and Photonics Society of Iran

Designed & Developed by : Yektaweb