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Volume 25 - ICOP & ICPET 2019
ICOP & ICPET _ INPC _ ICOFS 2019, 25 - ICOP & ICPET 2019: 105-108 |
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Mohammadrezaei M, Hatefi kargan N. Simulation of a MSM Ultraviolet Photodetector Based on GaN. ICOP & ICPET _ INPC _ ICOFS 2019; 25 :105-108
URL: http://opsi.ir/article-1-1782-en.html
URL: http://opsi.ir/article-1-1782-en.html
1- Department of Physics, Faculty of Basic Sciences, University of Sistan and Baluchestan
Abstract: (1876 Views)
Nowadays, numerical methods are widely used for the solution of problems due to the complexity of systems and geometries. Numerical computation is an effective tool for engineering semiconductor devices. In this research finite element method (FEM) has been used for simulation of a plasmonic MSM ultraviolet photodetector. For simulating the operation of this electronic device basic electromagnetic and semiconductor equations have been used. The results show that at a bias voltage of 10 V the dark current of the device is 5×10-12 A/cm2 and the photocurrent is 1.5×10-4 A/cm2. By using a plasmonic grid on the surface of the photodetector the photocurrent increased considerably, with a value of 1.5×10-4 A/cm2 at a bias voltage of 10 V while the variation on the dark current is negligible.
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