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Volume 25 - ICOP & ICPET 2019                   ICOP & ICPET _ INPC _ ICOFS 2019, 25 - ICOP & ICPET 2019: 173-176 | Back to browse issues page

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Shoorian S, Jafari H, Feghhi S A. Investigating and Calculating of Silicon Displacement defect due to irradiation on Photodiodes Using Carrier Lifetime Changes . ICOP & ICPET _ INPC _ ICOFS 2019; 25 :173-176
URL: http://opsi.ir/article-1-1781-en.html
1- Radiation Application Department, Shahid Beheshti University, Tehran, IRAN
Abstract:   (1887 Views)
Photodiodes as the base structure of many optical components may be exposed to ionizing radiation. In this paper, the effect of PKAs with different energies ( 50 eV, 100 eV and 200 eV, 500 eV and 1000 eV) have been investigated on a silicon photodiode. PKAs microscopic effects on the silicon structure, which cause  Frenkel defects formation and the creation of new energy levels in the semiconductor band gap,  The device’s macroscopic changes due to the trapping of charge carriers in the created traps, lead to the reduction of the photodiode cathode current and, consequently, the quantum efficiency, which is simulated and calculated by SILVACO. This affects the reliability of the data obtained from these components, which should be considered when designing the circuits and analyzing the results.
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Type of Study: Research | Subject: Special

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