Thickness and refractive index of waveguide layer determine the electro-optic characteristics in semiconductor lasers. In this research the stepped refractive index profile was replaced by suitable broadened graded refractive index in waveguide layer. The results show such design can significantly improve the vertical divergence and threshold current for laser operating in constant efficiency. In order to preventing of slop efficiency decreasing in broadened waveguide, we proposed the optimum dopant in n-section of waveguide without extra effective free carrier loss.
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