1- Faculty of Electrical and Computer Engineering, Tarbiat Modares University
Abstract: (1960 Views)
In this work, perovskite light emitting diode (PeLED) has been analyzed using two-dimensional simulation and its optical output is optimized. The device performance is investigated as a function of the perovskite thickness, as the active layer. The result reveals that the highest luminescence can be achieved by a perovskite layer with a thickness in the range of 5-20 nm. Furthermore, the density of trap states which indicates the quality of the active layer, is considered as one of the most substantial parameters to improve the efficiency of PeLEDs. It is shown that by increasing the lifetime of the carriers from 5 ns to 500 ns as a result of density of trap states reduction from 10-12 cm-3 for polycrystalline to 10-16 cm-3 for single crystal perovskite, the maximum luminous power enhances from 2.75 W/m2 to 3.26 W/m2 i.e. 18.5% increment in luminous power.
Keywords: Perovskite light emitting diodes, two-dimensional simulation, Trap density of state, SRH recombination
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