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Ghorbani Koltapeh A, Mardekatani Asl F, Abdollahi Nejand B, Moravvej-Farshi M K. Enhanced Open-circuit Voltage Using Al2O3 Inert Layer in Perovskite Solar Cells. ICOP & ICPET _ INPC _ ICOFS 2018; 24 :785-788
URL: http://opsi.ir/article-1-1565-en.html
URL: http://opsi.ir/article-1-1565-en.html
Atefeh Ghorbani Koltapeh * 
1, Farzad Mardekatani Asl1 , Bahram Abdollahi Nejand1 , Mohammad Kazem Moravvej-Farshi1
1, Farzad Mardekatani Asl1 , Bahram Abdollahi Nejand1 , Mohammad Kazem Moravvej-Farshi1
1- School of Electrical and Computer Engineering, Tarbiat Modares University
Abstract: (2251 Views)
We investigate the effect of Al2O3 thin film deposited on an electron transfer layer (ETL: mp-TiO2 ) in the perovskite solar cells with the conventional structure of FTO/c-TiO2/mp-TiO2/CH3NH3PbI3/spiro-OMeTAD/Au. Using the rotational angular deposition method to deposit a nanolayer of insulating Al2O3 by the reactive magnetron sputtering (RMS), as a passivating layer, we compare the open-circuit voltage (VOC) of the perovskite solar cells with and without Al2O3. The comparison shows the passivated cells has a higher VOC. We observe the same effect for solar cells with and without the hole transfer layer (HTL: spiro-OMeTAD). The Al2O3 nanolayer decreases the recombination centers, leading to higher VOC and cell efficiency.
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