The purpose of this research is to design a miniature hybrid plasmonic Al/p-Si compatible with CMOS with reduction power consumption at telecommunication wavelength 1550 nm. For this aim, n-p-n modulator with highly doped silicon was simulated by employing the finite difference time domain method. Using the metallic properties of silicon created by increasing the concentration of dopants, the plasmonic modes are supported and modulation operation is performed. According to the simulation results of this work, the extinction ratio and insertion loss are obtained as 7.74dB and 2.42dB respectively, furthermore the operation voltage is chosen between 0 to 2.3 Volts. Therefore, the proposed structure can be useful for designing the miniature and low consumption power modulators.

Keywords: : Modulator, Plasmonics, Extinction ratio, Insertion loss

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