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In this paper,the SnO2 transparent semiconductor thin films on glass substrates are prepared by using spray pyrolysis technique. The structural,optical and electrical properties of SnO2 thin films were investigated by x-ray diffraction(XRD),UV-Vis spectrophotometer. Thin film samples were annealed at 450°c,550°c and 650°c. Sheet resistance of the samples decrease with increasing annealing temperature. transmission in the annealing temperature650°c is increased substantially             












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Type of Study: Research | Subject: Special

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